4v drive pch mosfet RSJ250P10 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 1000 RSJ250P10 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 100 v gate-source voltage v gss ? 20 v continuous i d ? 25 a pulsed i dp ? 50 a continuous i s ? 25 a pulsed i sp ? 50 a power dissipation p d 50 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 limited only by maximum temperature allowed. *2 p w 10 ? s, duty cycle 1% *3 t c =25c ? thermal resistance symbol limits unit channel to ambient rth (ch-c) 2.5 ? c / w * t c =25c parameter type source current (body diode) drain current parameter * *3 *2 *2 (1) gate (2) drain (3) source ?1 esd protection diode ?2 body diode lpts 10.1 4.5 13.1 9.0 3.0 0.78 2.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) *1 *1 ?2 ?1 (1) (2) (3) 1/6 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSJ250P10 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 100 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 100v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -4563 i d = ? 25a, v gs = ? 10v -4867 i d = ? 12.5a, v gs = ? 4.5v -5070 i d = ? 12.5a, v gs = ? 4.0v forward transfer admittance l y fs l20 - - si d = ? 25a, v ds = ? 10v input capacitance c iss - 8000 - pf v ds = ? 25v output capacitance c oss - 300 - pf v gs =0v reverse transfer capacitance c rss - 200 - pf f=1mhz turn-on delay time t d(on) - 30 - ns i d = ? 12.5a, v dd ? 50v rise time t r - 67 - ns v gs = ? 10v turn-off delay time t d(off) - 310 - ns r l =4 ? fall time t f - 180 - ns r g =10 ? total gate charge q g - 60 - nc i d = ? 25a gate-source charge q gs - 17 - nc v dd ? 50v gate-drain charge q gd - 19 - nc v gs = ? 5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 25a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSJ250P10 ? electrical characteristic curves (ta=25 ? c) 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1 v gs = - 2.5v v gs = - 10v v gs = - 5.0v v gs = - 4.5v v gs = - 4.0v v gs = - 3.0v t a =25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 5 10 15 20 25 0 2 4 6 8 10 v gs = - 2.5v v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 3.0v t a =25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 100 0 1 2 3 4 v ds = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 0.1 1 10 100 v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 100 v gs = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 100 v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 3/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSJ250P10 10 100 1000 0.1 1 10 100 v gs = - 4.0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 100 v ds = - 10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 0 20 40 60 80 100 0 5 10 i d = - 25.0a i d = - 12.5a t a =25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 100 t f t d(on) t d(off) t a =25 c v dd = - 50v v gs = - 10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 t a =25 c v dd = - 50v i d = - 25a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 4/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSJ250P10 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 c iss c oss c rss t a =25 c f=1mhz v gs =0v fig.13 typical capacitance vs. drain - source voltage drain - source voltage : - v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 p w = 10ms t c = 25 c single pulse dc operation operation in this area is limited by r ds(on) (v gs = - 10v) p w =100us p w =1ms fig.14 maximum safe operating aera drain - source voltage : - v ds [v] drain current : - i d (a) 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25 c single pulse rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 57.9 c /w fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSJ250P10 ? measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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